| PART |
Description |
Maker |
| M29W102BB50N6T M29W102BB90N6T M29W102BT -M29W102BB |
1 Mbit 64Kb x16, Boot Block Low Voltage Single Supply Flash Memory 1兆位64Kb的x16插槽，引导块低压单电源闪
1 Mbit 64Kb x16 / Boot Block Low Voltage Single Supply Flash Memory
|
STMicroelectronics N.V.
ST Microelectronics
|
| M27V402 |
NND - 4 MBIT (256KB X16) LOW VOLTAGE UV EPROM AND OTP EPROM
|
ST Microelectronics
|
| M27V512-200N1 M27V512 |
NND - 512 KBIT (64KB X8) LOW VOLTAGE UV EPROM AND OTP EPROM
64K X 8 OTPROM, 200 ns, PDSO28
|
ST Microelectronics
STMICROELECTRONICS
|
| M29F100BB M29F100BT |
1 Mbit 128Kb x8 or 64Kb x16 / Boot Block Single Supply Flash Memory
|
ST Microelectronics
|
| M27W512 M27W512-100B6TR M27W512-100F6TR M27W512-10 |
4 Mbit 256Kb x16 Low Voltage UV EPROM and OTP EPROM
Hex D-Type Positive-Edge-Triggered Flip-Flops With Clear 16-SOIC 0 to 70
512 Kbit 64Kb x8 Low Voltage UV EPROM and OTP EPROM 512千位64Kb的x8低压紫外线EPROM和检察官办公室存储器
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
STMicroelectronics N.V.
|
| M27V101 |
NND - 1 MBIT (128KB X8) LOW VOLTAGE UV EPROM & OTP EPROM
|
ST Microelectronics
|
| M36DR432AD M36DR432AD10ZA6T M36DR432AD12ZA6T M36DR |
32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Product
|
STMICROELECTRONICS[STMicroelectronics]
|
| M36W0R7050B0 M36W0R7050B0ZAQ M36W0R7050T0 M36W0R70 |
SPECIALTY MEMORY CIRCUIT, PBGA88
128 Mbit (8Mb x16, Multiple Bank, Burst) Flash Memory and 32 Mbit (2Mb x16) PSRAM, 1.8V Supply Multi-Chip Package
|
STMICROELECTRONICS
ST Microelectronics
|
| M58LW064 M58LW064A M58LW064A150NF1T M58LW064A150NF |
64 Mbit x16 and x16/x32 / Block Erase Low Voltage Flash Memories
64 Mbit (x16 and x16/x32, Block Erase) Low Voltage Flash Memories
64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories
|
ST Microelectronics
SGS Thomson Microelectronics
|
